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Abstract
The application of light to a photoconductor results in a considerable change in the concentration of charged traps in its band gap, the change being a strong-function of light intensity and temperature. The effect of these carrier-scattering centres on the mobility causes it to be proportional to the free-carrier lifetimes at low temperatures, which is also a strong function of light intensity and temperature. The free carrier lifetimes and hence the mobility increase with increasing temperature. Since, at sufficiently high temperatures, the mobility is controlled by impurity scattering, which causes the mobility to decrease with increasing temperature, the mobility exhibits a maximum. The magnitude of the maximum and the temperature at which it occurs is a function of the light intensity and trap density.