Temperature dependent conductivity of closely compensated phosphorus-doped silicon

Abstract

The conductivity σ of P-doped Si has been measured for strongly compensated samples over a large temperature range down to T ≃ 1K. The results are in good agreement with theoretical models. They are thought to be particularly useful because they clearly show all the various regimes contributing to σ in a way which has not previously been achieved and are therefore suitable for com parison with theoretical estimates.

A few uncompensated samples have also been examined under the same experimental condition in order to distinguish those effects specifically arising from compensation.