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Abstract
High resolution transmission electron microscopy analysis of two‐layered graphene yielded Moiré patterns induced by Pt atoms/clusters located at the top of one of the layers, which induced rotation between planes. The rotations measures varied between three and five degrees. Theoretical analysis was performed using an extended Hückel tight‐binding scheme on two‐layered graphene with either containing two‐carbon atom vacancies or with two Pt atoms, with a cluster of 6 Pt atoms or with a cluster of 13 Pt atoms located at the top of one of the graphene layers. In most of the cases, the system remains semimetallic, except when a cluster of 6 Pt atoms was located on the surface of one of the graphene layers. For this case, the system behaves as a semiconductor with an energy gap Eg ∼ 0.05 eV. Furthermore, energy bands as well as total and projected.
Density of States were evaluated for each case in order to provide more information on the electronic behavior on the material under investigation.
ACKNOWLEDGMENTS
The authors acknowledge Y. Flores and SRFF from Supercomputer‐DGSCA UNAM for their technical support and DGAPA for financial support. This work was partially supported by ICNAM, NSF Grant DMR‐0602587 and WELCH Foundation Grant F‐1615.