Surface Potential of Graphene Oxide Investigated by Kelvin Probe Force Microscopy

Jun LiHunan Provincial Key Laboratory of Micro-Nano Energy Materials and Devices and School of Physics and Optoelectronics, Xiangtan University, Hunan411105, P R China;Laboratory for Quantum Engineering and Micro-Nano Energy Technology, Xiangtan University, Hunan411105, P R China

Xiang QiHunan Provincial Key Laboratory of Micro-Nano Energy Materials and Devices and School of Physics and Optoelectronics, Xiangtan University, Hunan411105, P R China;Laboratory for Quantum Engineering and Micro-Nano Energy Technology, Xiangtan University, Hunan411105, P R China

Guolin HaoHunan Provincial Key Laboratory of Micro-Nano Energy Materials and Devices and School of Physics and Optoelectronics, Xiangtan University, Hunan411105, P R China;Laboratory for Quantum Engineering and Micro-Nano Energy Technology, Xiangtan University, Hunan411105, P R China

Kai HuangHunan Provincial Key Laboratory of Micro-Nano Energy Materials and Devices and School of Physics and Optoelectronics, Xiangtan University, Hunan411105, P R China;Laboratory for Quantum Engineering and Micro-Nano Energy Technology, Xiangtan University, Hunan411105, P R China

Jianxin ZhongHunan Provincial Key Laboratory of Micro-Nano Energy Materials and Devices and School of Physics and Optoelectronics, Xiangtan University, Hunan411105, P R China;Laboratory for Quantum Engineering and Micro-Nano Energy Technology, Xiangtan University, Hunan411105, P R ChinaCorrespondence[email protected]

Abstract

In the paper, the graphene oxide (GO) prepared by modified Hummers method was characterized by Raman spectrum, Fourier transform infrared spectrum (FTIR), and Atomic Force Microscopy (AFM). Using Kelvin Probe Force Microscopy (KPFM), the surface potential of GO was investigated, and it was found that the GO film exhibited the uniform surface potential distribution. The surface potentials at the edges and wrinkles of GO film were much lower than that at the in-plane flat area, which is proposed to be contributed to the bonds’ unsaturated and disorder at these zones. These results provide insight into understanding electronic properties of GO-based composites and devices.

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Funding

This work was supported by the Grants from National Natural Science Foundation of China (No. 51172191 and 11204259) and National Basic Research Program of China (2012CB921303).

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Surface Potential of Graphene Oxide Investigated by Kelvin Probe Force Microscopy

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Surface Potential of Graphene Oxide Investigated by Kelvin Probe Force Microscopy

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