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ABSTRACT
C60 films were formed on a variety of substrates by ionized cluster beam (ICB) technique. Their structure was found to depend on the acceleration voltages and substrate. Then the Coo films were implanted by P+-ions with doses from 0—2×1014 ion/cm2. The in situ measurement of electrical conductivity revealed an abrupt decrease of three orders in resistance. The temperature coefficient of resistivity of the P+-ion implanted C60 film remained in a negative value.