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Original Articles

Interface evolution behavior of Si-based adhesive structures under tensile loading based on terahertz time-domain spectroscopy

ORCID Icon, , , , , , & show all
Pages 3185-3194 | Received 23 Sep 2022, Accepted 16 Jan 2023, Published online: 31 Jan 2023
 

Abstract

The thickness of the bonding interface changes after the structure has been subjected to tensile load, thereby affecting the strength of the bonding structure. It is necessary to monitor the evolution of the bonding interface thickness under tensile load. Through terahertz time-domain spectroscopy imaging and scale-invariant feature transform image processing, the thickness variation of three interfaces of 150 silicon-based adhesive structures under tensile load were analyzed. It was determined that variation at the edge was larger than that in the middle area. The research results also provide data support for the bonding structure health monitoring systems.

Acknowledgments

We would like to thank Changchun University of Science and Technology for the use of their equipment.

Additional information

Funding

This research was supported by the Jilin Province Science and Technology Development Plan Project with grant No. 20220508032RC, as well as the second batch of social welfare and basic research projects in Zhongshan with grant No. 2022B2012.

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