Fabrication of Organic Thin-Film Transistors Based on High Dielectric Nanocomposite Insulators

Abstract

Organic thin-film-transistors (OTFTs) with solution-processed high dielectric gate insulators were fabricated. The gate insulators were made of high dielectric TiO₂ nanoparticles dispersed uniformly in a polymer matrix of nylon 6 which is known to align liquid crystal molecules. It was found that the nanocomposite insulator in a pentacene-based OTFT reduces the operating voltage but it produces substantial current leakage. A buffer layer of polyvinylphenol on the top of the nanocomposite layer was found to block the leakage current and to increase significantly the carrier mobility as well as the current on-off ratio.

Keywords:

• leakage current
• nanocomposite
• OTFTs
• operating voltage
• polymer buffer layer

Acknowledgments

This work was supported in part by the Ministry of Science and Technology of Korea through the 21st Century Frontier Research and Development Program at the Information Display Center and Samsung SDI-Seoul National University Display Innovation Program.