Effects of Metal Electrodes on the Performance of Vertical Type Organic Thin Film Transistor Using C₆₀

Abstract

Vertical type organic thin film transistor (OTFT) using organic semiconductor such as C₆₀ was fabricated. C₆₀ shows n-type semiconducting property and has relatively high electron mobility. Vertical type OTFT using n-type active material has a layered structure of ITO(drain)/C₆₀/metal(gate)/C₆₀/metal(source). The semiconductor layers and electrodes of OTFTs were deposited by vacuum evaporation technique. The static characteristics of the fabricated OTFTs were investigated. Especially, the effects of C₆₀ layer thickness, source electrode and gate electrode on the performance of vertical type OTFTs were studied.

Keywords:

• C₆₀
• OTFT
• source and gate electrodes
• static characteristics
• vertical type transistor

Acknowledgments

This work was supported by the Basic Research Program of the Korea Science & Engineering Foundation (R01-2006-000-10196-0) and the second stage BK 21.