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Abstract
The low resistivity and excellent surface smoothness of IZO makes it a good candidate for high-quality transparent conducting electrodes in OLEDs. The deposition of IZO thin film by Facing Targets Sputtering system on glass substrate as function of substrate temperature. The device structure of the IZO anode is configuration of Al/LiF/Alq3/TPD/IZO. The electrical and optical properties of the as-doped IZO thin film were evaluated with UV/VIS spectrometer, Hall Effect measurement, XRD, AFM, FESEM. The resistivity and transmittance of the as-deposited films were 25.3 Ω/sq and above 80% in the visible range. The performance of OLED was evaluated by J-V-L measurements.
Acknowledgment
This study was supported by the kyungwon University Research Fund in 2009.