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THIN FILM

Temperature Effects on Cu2ZnSnS4 (CZTS) Films Deposited by Spraying Method

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Pages 155-161 | Published online: 20 Aug 2012
 

Abstract

CZTS containing ink was prepared by a sonochemical method, and properties of CZTS thin films deposited by a spraying method were investigated. We used CuCl2, ZnCl, SnCl2 and thiourea as precursor materials, 2-methoxyethanol as a solvent, and monoethanolamine as a stabilizer. X-ray diffraction (XRD) patterns from the CZTS films mainly exhibited the (112), (200), (220), and (312) planes of a kesterite structure, and a phase transition was not observed in the range of annealing temperatures (maximum 500°C) investigated in this study. Full width at half maximum (FWHM) values of all the XRD peaks stay nearly constant up to the annealing temperature of 300°C, and suddenly decreases from 300°C to 450°C, and finally saturates above ∼450°C. The optical bandgap of CZTS films was ∼1.25 eV, and the atomic elemental ratio of Cu:Zn:Sn:S in CZTS films was approximately 2:1:0.9:3.5. These results demonstrate that the CZTS containing ink developed in this study has promising potential for the formation of high quality CZTS thin films for solar cell applications.

Acknowledgments

This reseach was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2010-0023839), and the Human Resources Development Program of Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant (No. 20104010100580) funded by the Korean Ministry of Knowledge Economy.

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