Property of Cu(In,Ga)Se₂ Absorption Layer Produced using a Proximity Selenization Method

Abstract

Cu(In,Ga)Se₂ thin films were prepared using co-sputtering and proximity selenization. This new method supplies Se by closely attaching opposite a metal precursor. CuInSe₂ thin film was produced at 280°C, and consisted of small structures. As the temperature was increased, more Ga was substituted in place of In, while the X-ray peak of the CuInSe₂ shifted to the right. A thin film with a Cu:In:Ga:Se ratio of 1:0.7:0.3:2 was obtained at 480°C, which is comparatively lower than the temperature needed when using Se vapor. This grew into crystals with a diameter of 3–5 μm.

Keywords:

• CIGS
• photovoltaic
• thin film solar cell
• selenization
• metal precursor
• sputtering