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Abstract
The influences of the post thermal treatment conditions on the physical, structural, surface morphological and optical properties of CISe2 thin films deposited by a non-vacuum spray process were investigated for solar cell applications. In order to study the effects of thermal annealing on the films, the annealing temperature of the as-deposited CISe2 thin films were varied from 300°C to 500°C. The estimated optical band gaps of the as-deposited CuInSe2 film and the film annealed at 500°C were ∼1.48 eV and ∼1.06 eV, respectively. A tetragonal chalcopyrite structure of CuInSe2 was identified in XRD measurement. From the XRD analysis, it was confirmed that the crystal growth of the CuInSe2 are affected by the annealing temperature. The film annealed at 500°C shows the best crystallinity. SEM image shows that the thickness and the grain size of the film annealed at 500°C are around 2.66 μm and 40.22 nm, respectively. The identified chemical binding states of the CuInSe2 film annealed at the optimum annealing temperature were confirmed through XPS analysis. The average particle size of the film was determined using TEM and its value was around 10.6 nm.