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Abstract
Organic thin film transistors (OTFTs) with bottom gate and top contact structure had been prepared by inkjet printing. It is found that the surface properties of the substrates have a great influence on the morphology of the inkjet printed droplet and film. An appropriate surface was vital to form a uniform semiconducting film by inkjet printing and also strongly improved the electric characteristics. When a bare SiO2 layer was applied, the best field-effect mobility of inkjet printed OTFT devices was only 2.37 × 10−3 cm2V−1s−1, with an on/off current ratio of 102. When the PETS treatment or the PTS treatment was applied on the SiO2 dielectric layer, the field-effect performances were substantially improved and the best field-effect mobility was enhanced to 8.07 × 10−3 cm−2V−1s−1 and 7.95 × 10−3 cm−2V−1s−1, respectively and with an on/off current ratio of 103.