Abstract
We report ambipolar organic field effect transistors (OFETs) and complementary inverters based on polyazine containing diketopyrrolopyrrole (PBTDAZ). PDBTAZ OFETs showed well-balanced electron and hole mobilities of 0.13 and 0.12 cm2/(V·s) at a low annealing temperature of 100oC using bottom-contact, top-gate geometry with a CYTOPTM gate dielectric layer. The mobilities were improved to 0.56 cm2/(V·s) by thermal annealing (150°C). The ambipolar complementary-inverter-based PDBTAZ OFETs showed ideal Vinv near half of VDD with a high gain of 15∼20 due the well-balanced electron and hole mobilities.