Fabrication and Crystal Structure Analysis of a CIGS Solar Cell Absorber by Thermal Annealing of Sputtered CIG Precursors Deposited with a Se Layer

Abstract

Various Cu(In,Ga)Se₂ (CIGS) films were prepared by using in-line sputter for CIG precursor and evaporator for selenization. Deposition parameters are substrate temperature at sputtering process, post annealing temperature (400∼500°C) and annealing method (thermal furnace and high-temperature in-situ XRD). Temperature dependent XRD patterns of the samples were measured with high temperature option and this pattern shows that post annealing at 400∼500°C is necessary for CIGS absorber deposition with no second phase by in-line sputtering. The CIGS film which is annealed at 500°C shows good crystallographic property and there is no second phase like Cu_2−xSe.

Keywords:

• CIGS absorber
• sputtering
• CIG ternary targets
• post annealing

Funding

This work was supported by the Center for Science & Technology Research (CSTR) grant funded by the Korean government (MEST). CSTR-001-100701-03.