Nanosized materials CeO₂/SnO₂ and CeO₂/SnO₂-Sb₂O₅ for adsorption semiconductor sensors to detect hydrogen in air

I. P. MatushkoFaculty of Chemistry, Taras Shevchenko National University of Kyiv, 12 Lva Tolstogo Str., Kyiv, 01033, Ukraine.

H. O. ArinarkhovaFaculty of Chemistry, Taras Shevchenko National University of Kyiv, 12 Lva Tolstogo Str., Kyiv, 01033, Ukraine.

L. P. OleksenkoFaculty of Chemistry, Taras Shevchenko National University of Kyiv, 12 Lva Tolstogo Str., Kyiv, 01033, Ukraine.

N. P. MaksymovychFaculty of Chemistry, Taras Shevchenko National University of Kyiv, 12 Lva Tolstogo Str., Kyiv, 01033, Ukraine.

G. V. FedorenkoFaculty of Chemistry, Taras Shevchenko National University of Kyiv, 12 Lva Tolstogo Str., Kyiv, 01033, Ukraine.

Abstract

Nanosized materials based on SnO₂ and SnO₂ – Sb₂O₅ with different concentrations of added cerium were synthesized by a sol-gel method. Semiconductor gas sensors on the base of the materials were created and their characteristics (electrical resistance in air, response to hydrogen, dynamic properties) were studied. It is shown that cerium addition significantly improves the sensor response due to high catalytic activities of Ce-containing nanosized oxide materials in the H₂ oxidation reaction. SnO₂-based sensors were found to demonstrate higher sensitivity to hydrogen than SnO₂-Sb₂O₅ based sensors. Possible mechanism concerning formation of the sensitivity of the Ce-containing sensors to H₂ is proposed.

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Nanosized materials CeO₂/SnO₂ and CeO₂/SnO₂-Sb₂O₅ for adsorption semiconductor sensors to detect hydrogen in air

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Nanosized materials CeO₂/SnO₂ and CeO₂/SnO₂-Sb₂O₅ for adsorption semiconductor sensors to detect hydrogen in air