Abstract
A theory of exciton quasi-molequle (formed from spatially separated electrons and holes) in nanosystems that consist of germanium quantum dots synthesized in a silicon matrices is developed. It was found that the binding energy of singlet ground state of exciton quasi - molecule, consisting of two germanium quantum dots is a significant large values, larger than the binding energy of the biexciton in a silicon single crystal by almost two order of magnitude.