Study of electrical conductivity in metallic n-type InP semiconductor at low temperature in presence of strong magnetic field

Abstract

We have studied the transport properties in metallic n-type InP semiconductor. We show that the dependence on temperature of metallic electrical conductivity obey to the law $=\sigma \left(T=0\right)+m{T}^{1/2}.$ We have found that the coefficient of thermal variation m changes sign when the magnetic field increases. We have proposed several complex theories to provide a physical explanation for this sign change such as the Zeeman effect, the effects of weak localization and the effects of electron-electron interactions.

Keywords:

• Metal-insulator transition
• low temperatures
• strong magnetic fields
• low localization effect
• electron-electron interaction effects
• metallic electrical conductivity
• coefficient of thermal variation