Nanosized tin dioxide based semiconductor materials for creation of gas sensors

Abstract

Nanosized initial semiconductor tin dioxide based material was synthesized by a sol-gel technique and characterized by XRD, IR-spectroscopy, DTA-DTG and TEM methods. Nanosized SnO₂-based sensor materials were prepared using the pastes with different quantities of tin dioxide and carboxymethyl cellulose and formatted at various temperatures. It was found that the compositions of the pastes significantly affect the characteristics of the sensors obtained on their base. The characteristics of the sensors of different compositions were explained by necessity of the presence of sufficient number of contacts between the nanoparticles of the sensor material, which ensure the electrical conductivities of the sensors.

Keywords:

• Nanosized materials
• semiconductor sensors
• sensitivity to hydrogen
• sol-gel synthesis
• tin dioxide

Disclosure statement

No potential conflict of interest was reported by the author(s).

Additional information

Funding

Funding for this research was provided by: Ministry of Education and Science of Ukraine (grant for the perspective development of the scientific direction "Mathematical sciences and natural sciences" at the Taras Shevchenko National University of Kyiv).