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Abstract
The mechanism of exciton migration in anthracene crystals was studied by measuring a rate constant, γ, for the bimolecular annihilation of exitons at various temperatures between 5°K and 250°K. Consequently, γ was found to be proportional to 1/√T. This is in accordance with the band model for the exciton motion. The present method for the study of the singlet-exciton migration, which is free from the trapping effect by impurity-induced lattice defects and from the host-guest interaction effect, is superior to the usual method using host-guest systems.