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Thin films of copper nitride were deposited on glass substrates using dc reactive magnetron sputtering technique by sputtering of copper target under various sputtering powers in the range 30–140 watt. The influence of sputtering power on the structural, electrical and optical properties was systematically studied. Single phase films of copper nitride were obtained at a sputtering power of 75 watt with electrical resistivity of 5.8×10−2 Ω cm and an optical band gap of 1.84 eV.
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One of the authors (KVSR) is grateful to the University Grants Commission, New Delhi, India for the Grant of fellowship to carryout the present research work under the Faculty Improvement Programme.