Iron Oxide Thin Film Deposition on Si(100) Substrate using MOCVD Method

We have deposited iron oxide thin films on Si(100) substrates using single molecular precursor in the range of 300–500°C by metal‐organic chemical vapor deposition (MOCVD) method. Iron pentacarbonyl [Fe(CO)₅] and oxygen gas were used as the iron source and oxidizing agent, respectively. The Si(100) wafer was used a substrate and it was cleaned by sequential ultrasonic baths of acetone, ethanol, HF (10%) and rinsed by de‐ionized water. To deposit the iron oxide thin films on the substrate, O₂ reactive gas was needed during the deposition. We have studied the changes of morphology, crystallinity and thickness of films deposited at various ratios of injected precursor to O₂ volume as well as several deposition temperatures. The as‐grown thin film was first characterized by X‐ray diffraction (XRD) for the study of crystallinity. To confirm the morphologies and thickness, scanning electron microscopy (SEM) analysis was also performed. To identify the composition of the deposited thin films, energy dispersive X‐ray (EDX) and X‐ray photoelectron spectrometry (XPS) analyses were carried out.

Keywords:

• iron oxide
• iron pentacarbonyl
• MOCVD