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The single crystals of tungsten disulphide (WS2) were grown by chemical vapor transport (CVT) technique, using iodine as the transporting agent. The stoichiometric composition and the crystallographic lattice parameters of the grown crystals were determined by EDAX and X‐ray diffraction (XRD) techniques, respectively. The Hall effect measurement and the Seebeck coefficient variation with temperature confirmed that the single crystals were p‐type semiconductor. The detailed surface microtopographic studies of these crystals by means of optical microscopy showed that the layer mechanism is predominant during crystal growth. Even spiral growth is equally common on the as‐grown faces.
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