Influence of Annealing Time on Crystallization of Amorphous SI by SB

Y. Wang Beijing Institute of Petro‐Chemical Technology, BeijingCorrespondence[email protected]

H. Z. Li Beijing Institute of Petro‐Chemical Technology, Beijing

D. L. Li Beijing Institute of Petro‐Chemical Technology, Beijing

G. J. Xing Beijing Institute of Petro‐Chemical Technology, Beijing

C. N. Yu Beijing Institute of Petro‐Chemical Technology, Beijing

I. Gordon IMEC, Kapeldreef, Leuven, Belgium

O. Van Der Biest K.U. Leuven, Kasteelpark Arenberg, Heverlee (Leuven), Belgium

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The Sb induced crystallization of physics vapor deposit amorphous silicon can be observed on sapphire substrates after annealing at 770 K. The influence of annealing time on crystallization of amorphous Si by Sb is investigated. We find the crystallization of amorphous silicon can occur at 770 K, even for a very short annealing time.

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Acknowledgement

This work was supported by the Foundation of Beijing Municipal Education of China (No. KM200710017009).

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Influence of Annealing Time on Crystallization of Amorphous SI by SB

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