Analysis of heat conduction in a nanoscale metal oxide semiconductor field effect transistor using lattice Boltzmann method

ABSTRACT

Thermal transport in the microelectronic devices has been widely investigated to enhance its reliability. Within this context, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) represents the most used technology for electronic devices manufacturing. Due to its size reduction, the macroscopic model for MOSFET device requests some modifications for capturing thermal behavior within it. Hence, a precise mathematical model for phonon heat transport into transistors has become a key task for nano-electronics technology. The present work aims to investigate the ability of a mesoscale mathematical model for the heat conduction in a MOSFET at a Knudsen number of 10. The reported model was based on D₂Q₈ lattice Boltzmann model coupled with jump temperature boundary condition. The thermal source was supposed to be uniform along the MOSFET channel region. The temperature jump boundary condition was applied and treated by Lattice Boltzmann Method (LBM) in order to reveal the nature of the phonon-wall collisions lengthwise the channel. We have found that the behavior of the proposed model agrees with experimental results in terms of peak temperature rising. Furthermore, the maximum temperature in the interface (Si-SiO₂) is around 333 K. In addition, the results show that 30 ps is enough to reach the steady-state condition. The gained results indicate that the LBM joined with jump temperature condition provides accurate results and it can be employed for analyzing heat transfer phenomenon in microelectronic devices.

KEYWORDS:

• MOSFET
• temperature jump
• microelectronic devices
• Boltzmann transport equation
• lattice Boltzmann method
• heat conduction

Nomenclature

Table

Acknowledgments

This work was supported by The General Directorate of Scientific Research and Technological Development of Algerian ministry of high education and scientific research.

Additional information

Funding

This work was supported by the Direction Générale de la Recherche Scientifique et du Développement Technologique [A11N01UN390120190001].

Notes on contributors

Oussama Zobiri

Oussama Zobiri is a Master's degree in Mechanical Engineering, Energetic. He is currently a PhD of Mechanical Engineering and member of Saharan Energy Resources Exploitation and Development Laboratory (LEVRES), Department of Mechanical Engineering, University of El Oued, Algeria. His research interests include modelling and simulation of transport phenomenon, convection-diffusion computing, lattice Boltzmann method applications, PEMFC and MOSFET.

Abdelmalek Atia

Abdelmalek Atia received the Dipl. Eng., M. Eng. and Ph.D. degrees in Mechanical Engineering from Boumerdes University, Algeria, in 2007, 2010 and 2016, respectively. He is currently a Lecturer/Researcher of Mechanical Engineering and member of Saharan Energy Resources Exploitation and Development Laboratory, Department of Mechanical Engineering, University of El Oued, Algeria. His research interests include modelling and simulation of transport phenomenon, convection-diffusion computing, lattice Boltzmann method applications, transport in porous media, PEMFC simulation, MOSFET simulation, solar drying, Geothermal Heat Exchanger and looking for innovate solution to enable the sustainable energy transition . He has published a set of research articles in journals and chapter Book as well as  papers in conferences contributed as author/co-author. In addition, He is managing  two scientific projects about Renewable Energy in Arid Zone.

Müslüm Arıcı

Müslüm Arıcı is a faculty member in Mechanical Engineering Department of Kocaeli University, Turkey. He completed Diploma Course at von Karman Institute, Belgium in 2007 and received PhD degree from Kocaeli university in 2010. His research fields of interest are Numerical Heat Transfer, Computational Fluid Dynamics, Thermal management, Thermal Energy Storage, and Nanofluids.