A low ripple current rejection method to improve the lifetime of solar photo voltaic integrated GaN converter system

ABSTRACT

The performance up-gradation that enhances the power output of the solar photovoltaic (SPV) panel along with life term is the latest demand in any standalone applications. The current ripple rejected to the SPV panel has both electrical and thermal effects. Lower the ripple, lower will be the power loss and the rise in temperature. Here, a method for an additional ripple current reduction at the source is demonstrated with a 300 W, 500 kHz, gallium nitride device-based panel integrated three-phase synchronous boost converter. A simple procedure of listing the switching states at each ON and OFF of polyphase periods in the analytical method for ripple estimation is proposed. A novel input current ripple reduction method, in addition to that of conventional operations, which leads the converter operations with minimum ripple rejection implemented. The factors that enhance the life of the SPV system, accomplishment of a typical improvement of 7% with a reduction of 3.5 deg. C rise in temperature, for all electrical reflections of the converter, is evaluated. Additionally, the electrical performance of 96.4% efficiency and 3.90 × 10⁶ W/m³ power density was achieved. An SPV module integrated converter for a LED street-lighting application, implemented with the proposed method is detailed.

KEYWORDS:

• Gallium nitride (GaN)
• high electron mobility transistor (HEMT)
• three-phase synchronous boost converter (3pSBC)
• solar photovoltaic panel integrated converter
• current ripple reduction
• low current ripple rejection

Disclosure statement

No potential conflict of interest was reported by the author(s).

Additional information

Notes on contributors

Chandrasekar Venkatesan

Chandrasekar Venkatesan (SM’16) received the B.E (EEE) degree from Coimbatore Institute of Technology, Coimbatore, India, in 1995 and the M.E in Power Electronics and Drives from College of Engineering, Anna University, Chennai, India, in 1997. Subsequently, he joined C-DAC(T) in Power electronics group, where he is currently a Scientist ‘G’/ Sr. Director. He is currently pursuing his Ph.D. degree at NIT Tiruchirappalli.

His areas of interest are switch-mode power converters for Automotive (EV and HEV) and Industrial applications, Power conditioners for Fuel cell and other renewable power plants, WBG (SiC & GaN) devices based Power Electronics.

Chilakapati Nagamani

Chilakapati Nagamani (SM’15) received the B.Tech. degree from S.V.U.C.E., Tirupati, M.Tech. degree from IIT,Kanpur, and the Ph.D. degree from the University of Technology, Sydney, NSW, Australia, respectively. From 1985 to 1991, she was with the Central Power Research Institute, Bangalore, India. Subsequently, she joined the EEE Department, National Institute of Technology (then known as Regional Engineering College), Tiruchirappalli, India, as a lecturer. Currently, she is a Professor (HAG) with the same department.

Her research interests include power electronics and drives, renewable energy systems, WBG power Electronics and FACTS controllers.

Saravana Ilango Ganesan

Ganesan Saravana Ilango (SM’17) graduated from Madras University, Chennai, India, in 2000. He received the M.E degree from Bharathidasan University, Tiruchirappalli, India, in 2001, and the Ph.D. degree from National Institute of Technology, Tiruchirappalli. From 2001 to 2004, he was a Lecturer with Noorul Islam College of Engineering, Kumaracoil, India. Currently, he is an Associate Professor with the Department of Electrical and Electronics Engineering, National Institute of Technology, Tiruchirappalli.

His research interests include power electronics and drives, renewable energy systems, WBG power Electronics, and FACTS controllers.