Active‐matrix cathodes though integration of amorphous silicon thin‐film transistor with triode ‐and diode‐type field emitters

Abstract

Amorphous silicon thin‐film transistors (a‐Si TFTs) were incorporated into Mo‐tip‐based triode‐type field emitters and diode‐type ones of carbon nanotubes for an active‐matrix cathode (AMC) plate of field emission displays. Also, we developed a novel surface‐treatment process for the Mo‐tip fabrication, which gleatly enhanced in the stability of field emission. The field emission currents of AMC plates on glass substrate were well controlled by the gate bias of a‐Si TFTs. Active‐matrix field emission displays (AMFEDs) with these AMC plates were demonstrated in a vacuum chamber, showing low‐voltage matrix addressing, good stability and reliability of field emission, and highly uniform light emissions from the anode plate with phosphors. The optimum design of AMFEDs including a‐Si TFTs and a new light shield/focusing grid is discussed.

Keywords:

• active‐matrix field emission display
• active‐matrix cathode
• field emitter
• molybdenum tip
• carbon nanotubes
• amorphous silicon thin‐film transistor

Notes

Member, KIDS.