Self‐sustained n‐type memory transistor devices based on natural cellulose paper fibers

Abstract

Reported herein is the architecture for a nonvolatile n‐type memory paper field‐effect transistor. The device was built via the hybrid integration of natural cellulose fibers (pine and eucalyptus fibers embedded in resin with ionic additives), which act simultaneously as substrate and gate dielectric, using passive and active semiconductors, respectively, as well as amorphous indium zinc and gallium indium zinc oxides for the gate electrode and channel layer, respectively. This was complemented by the use of continuous patterned metal layers as source/drain electrodes.

Keywords:

• hybrid memories
• floating memory
• floating TFT memory

Notes

CENIMAT/I3N, Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia, FCT, Universidade Nova de Lisboa, and CEMOP‐UNINOVA, 2829–516 Caparica, Portugal

CQFB/REQUINTE, Departamento de Química, Faculdade de Ciências e Tecnologia, FCT, Universidade Nova de Lisboa, 2829–516 Caparica, Portugal

Departamento de Química, Universidade do Minho, Campus de Gualtar, 4710–057 Braga, Portugal