Light effects of the amorphous indium gallium zinc oxide thin‐film transistor

Keun Woo Lee School of Electrical and Electronic Engineering, Yonsei University, 262 Seongsanno, Seodaemun‐Gu, Seoul, 120–749, Republic of Korea

Hyun Soo Shin School of Electrical and Electronic Engineering, Yonsei University, 262 Seongsanno, Seodaemun‐Gu, Seoul, 120–749, Republic of Korea Phone: +82–2–2123–5865 Fax: +82–2–2123–5865 E-mail: [email protected]

Kon Yi Heo School of Electrical and Electronic Engineering, Yonsei University, 262 Seongsanno, Seodaemun‐Gu, Seoul, 120–749, Republic of Korea Phone: +82–2–2123–5865 Fax: +82–2–2123–5865 E-mail: [email protected]

Kyung Min Kim School of Electrical and Electronic Engineering, Yonsei University, 262 Seongsanno, Seodaemun‐Gu, Seoul, 120–749, Republic of Korea Phone: +82–2–2123–5865 Fax: +82–2–2123–5865 E-mail: [email protected]

Hyun Jae Kim School of Electrical and Electronic Engineering, Yonsei University, 262 Seongsanno, Seodaemun‐Gu, Seoul, 120–749, Republic of Korea Phone: +82–2–2123–5865 Fax: +82–2–2123–5865 E-mail: [email protected]

Abstract

The optical and electrical properties of the amorphous indium gallium zinc oxide thin‐film transistor (a‐IGZO TFT) were studied. When the a‐IGZO TFT was illuminated at a wavelength of 660 nm, the off‐state drain current slightly increased, while below 550 nm it increased significantly. The a‐IGZO TFT was found to be extremely sensitive, with deep‐level defects at approximately 2.25 eV near the midgap. After UV light illumination, a slight change occurred on the surface of the a‐IGZO films, such as in terms of the oxygen 1s spectra, resistivity, and carrier concentrations. It is believed that these results will provide information regarding the photo‐induced behaviors in the a‐IGZO films.

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Student member, KIDS

Member, KIDS

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Light effects of the amorphous indium gallium zinc oxide thin‐film transistor

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Light effects of the amorphous indium gallium zinc oxide thin‐film transistor

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