Low‐temperature polycrystalline silicon level shifter using capacitive coupling for low‐power operation

Abstract

A new level shifter using low‐temperature polycrystalline silicon (poly‐Si) thin‐film transistors (TFTs) for low‐power applications is proposed. The proposed level shifter uses a capacitive‐coupling effect and can reduce the power consumption owing to its no‐short‐circuit current. Its power saving over the conventional level shifter is 72% for a 3.3 V input and a 10 V output.

Keywords:

• low power
• level shifter
• capacitive coupling

Notes

Member, KIDS

School of Electrical Engineering, Kumoh National Institute of Technology, 1 Yangho‐dong, Gumi, Gyeongbuk, 730–701, South Korea

Sutdent Member, KIDS

AP2 Process Integration Team, LG Display, Paju, Gyeonggi, 413–811, South Korea