Multinomial based memristor modelling methodology for simulations and analysis

Abstract

In this article, we propose a novel memristor modelling methodology with multinomial window function obtained by extensive statistical fitting of the measured data of a practical memristor device. Due to such modelling, the desired electrical characteristics that a fabricated memristor device typically exhibits is accurately described. Moreover, the model features the non-linear state transition behaviour. To demonstrate the effectiveness of the proposed modelling methodology, a Verilog-A-based memristor model has been implemented, leading to further development of a memristor-based complementary resistive switch (CRS). We show that the proposed memristor modelling methodology facilitates accurate device-level characteristics and also advances effective circuits and system simulations using memristors.

Keywords:

• memristor
• multinomial model
• Verilog-A
• simulation
• analysis

Acknowledgements

This current archival journal paper is based on our conference publication (Li, Mathew, & Pradhan, 2013). Authors would like to acknowledge the editors and unknown reviewers for their constructive feedbacks.