Measurement of noise and efficiency of 4H-SiC IMPATT diode at Ka-band

Abstract

In this paper, different DC parameters such as the efficiency, voltage drop along the diode, quality factor, resistance and the noise measurement on a one dimensional n⁺npp⁺ DDR structure of 4H-SiC-based IMPATT diode have been studied using advanced computer simulation programme. The efficiency and noise measure vary with the operating frequency of the IMPATT diode. The efficiency as well as the noise measurement plays an important role in the choice of operating frequency. So, throughout the Ka band these parameters of the 4H-SiC IMPATT Diode are measured and compared and will be well suited for the optimum design in the Ka-band.

Keywords:

• drift voltage
• DC resistance
• efficiency
• noise measure
• quality factor
• avalanche voltage