Research Progress on Silicon Vacancy Color Centers in Diamond

Abstract

The silicon vacancy (SiV) color centers in diamond have significant potential in the fields of quantum information, nanophotonics, bioimaging and sensing, due to its good structural stability at room temperature, strong photostability, short luminescence lifetime, narrow zero-phonon line bandwidth, and avoidance of biological autofluorescence. They have attracted extensive attention and in-depth research from researchers. The applications of SiV color centers in the above areas require addressing key issues such as control over the number and charge state of SiV color centers in diamond, as well as improving the luminous efficiency. Therefore, this review summarizes some recent relevant research progress, including common methods for preparing SiV color centers, control over their luminescence intensity, preparation of SiV single-photon sources, and research on the control of SiV color center charge states. Based on these, an outlook is provided for the preparation and application of SiV color centers in diamond.

The figure of Table of Contents (TOC)

Keywords:

• Diamond
• SiV color centers
• photoluminescence
• charge state
• single-photon source

Author contributions

Chengke Chen: Conceptualization, writing – review & editing. Bo Jiang: literature survey, writing of original drafts. Xiaojun Hu: Conceptualization, supervision, writing – review & editing.

Disclosure statement

No potential conflict of interest was reported by the author(s).

Additional information

Funding

This work was supported by National Natural Science Foundation of China (Grant Nos. 52102052); Key Project of National Natural Science Foundation of China (Grant No. U1809210); and Key Research and Development Program of Zhejiang Province (2018C04021).