Self-Organized (100)-/(001)-Preferred Orientation in Pb(Zr,Ti)O₃ Films Grown on Polycrystalline Substrates by Metalorganic Chemical Vapor Deposition

Abstract

Lead zirconate titanate [Pb(Zr _x Ti_{1 − x} )O₃, PZT] films were grown on (100), (110) and (111)SrRuO₃//SrTiO₃ substrates at 600°C by metalorganic chemical vapor deposition (MOCVD). The crystal orientation dependence of the growth rate was investigated for these films. The growth rate of (100)-/(001)-oriented epitaxial films was approximately 1.7 and 2.0 times higher than that of (110)-/(101)- and (111)-/(11&1macr;)-oriented epitaxial films, respectively. On the other hand, the growth rate of (100)-/(001)-preferred oriented PZT films grown on (111)Pt/TiO₂/SiO₂/(100)Si substrates was almost the same with that of (100)-/(001)-oriented epitaxial films. The deposition rate of these films was approximately 1.5 μm/h. High growth rate of (100)-/(001)-oriented PZT grains makes (100)-/(001)-preferred orientation on (111)Pt/TiO₂/SiO₂/(100)Si substrate. From transmission electron microscopy observation, (100)-/(001)-oriented grains were found to be directly grown on (111)-oriented Pt grains without obvious another oriented grains. As a result, orientation-controlled PZT films were successfully grown on (100)Si substrates having (111)-oriented Pt bottom electrodes.

Keywords:

• PZT
• MOCVD
• deposition rate
• orientation
• self-organized growth