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Abstract
This research studied the structure and the electrical resistivity after rapid thermal annealing of CoxN thin film deposited by unbalanced radiofrequency magnetron-reactive sputtering (in 6:4 Ar + N2 mixture) at low pressure (6.7 × 10−1 Pa) with the use of a magnetized plasma. An improvement of structure and lower sheet resistivity after annealing at 500°C for 15–60 sec was observed. At higher temperatures, decomposition of CoxN and growth of CoSi were observed.
5.0 ACKNOWLEDGMENT
This paper was presented at the International Conference EBT 2000, Varna, Bulgaria.
