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Abstract
In this paper we present computed results of the averaged electric field in the semiconductor obstacle placed in the coaxial line. Such layout might be used as a sensor for the measurement of microwave pulse power transmitted through the coaxialline. FDTD (finite different time domain) method was applied for the theoretical investigation. The dependences of the averaged electric field in the obstacle on the microwave frequency, as well as on the dimensions and specific resistance of the obstacle are considered. Both layouts with the obstacle placed on the inner and on the outer conductor of the coaxial line were investigated. Calculations were performed for the 50 Ω impedance coaxial line filled with air and obstacle made from Si.