Spectroscopic Characterization of BA(MG1/3TA2/3)O3 Dielectrics for the Application to Microwave Communication

H.-F. Cheng Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan

C.-T. Chia Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan

H.-L. Liu Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan

M.-Y. Chen Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan

Y.-T. Tzeng Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan

I.-N. Lin Department of Physics, Tamkang University, Taipei 251, Taiwan

Abstract

The lattice vibrational modes of the BA(MG_1/3TA_2/3)O₃ materials, possessing dielectric constants K = 22.2 – 25.5 and quality factor Q × f = 182,600 – 248,000 GHz, were characterized by Raman and FTIR spectroscopies. The high-Q materials possess sharpest vibrational modes, viz., smallest full-width-at-half-maximum (FWHM) value for Raman peaks and smallest damping coefficient γ_j value for FTIR peaks and vice versa.

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Spectroscopic Characterization of BA(MG1/3TA2/3)O3 Dielectrics for the Application to Microwave Communication

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Spectroscopic Characterization of BA(MG1/3TA2/3)O3 Dielectrics for the Application to Microwave Communication

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