A Temperature-dependent Current Model for Phemt on Gaas

L. Wang School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu, China

R. M. Xu School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu, China

Y. C. Guo School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu, China

B. Yan School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu, China

Abstract

Modified current model has been developed to more accurately model the current-voltage characteristics of GaAs pHEMTs over a wide range of temperature. In particular, the modeling accuracy of knee, saturation and subthreshold regions has been greatly improved. These results are achieved by introducing the polynomial expression on the bias conditions. The verification is performed by fabricated pHEMTs at different temperature. Good agreement is obtained.

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A Temperature-dependent Current Model for Phemt on Gaas

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A Temperature-dependent Current Model for Phemt on Gaas

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