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Articles

Investigation of Near Field Intensity in GAN MQW in 300–375 Nanometer Wavelength Ranges

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Pages 1122-1130 | Published online: 03 Apr 2012
 

Abstract

Analysis of optical confinement and investigation of near field intensity in multiple quantum well (MQW) structure of GaN/AlGaN has been carried out in 300–375 nanometer wavelength ranges. Spread of near field intensity has been deduced in terms of full width at half maximum (FWHM) as a function of wavelength, Aluminum composition in the barrier and temperature. FWHM was found to be decreasing with increase of Al mole fraction and temperature and FWHM was increasing with wavelength. Confinement factor has been explored for varying values of Aluminum mole fraction, temperature and wavelength. It is inferred from our analysis that confinement of near field increases with increase in Aluminum composition of barrier and temperature while it was found to be decreasing with increase in wavelength.

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