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Abstract
This paper presents the characterization of thin film dielectric materials, labeled as LW 51 KTN and LW 48 KTN. The technique can be applied for lower temperatures. We briefly present the material process of both thin films, then the dielectric characterization using a conventional TE mode cavity method [1–5] with the help of a rigorous simulation software based on the method of lines [6]. We finally measured high permittivity and low loss-tangent materials within the microwave frequency range from 12 to 15 GHz.
