Accurate Modeling of Minimum Noise Figure in Algan/Gan High Electron Mobility Transistors

Abstract

The periodical nonlinear characteristic of minimum noise figure (F _min) versus frequency in AlGaN/GaN HEMT is studied by using support vector regression (SVR) and the empirical Van der Zeil-Pucel (PUCEL) model in this paper. The black box model based on SVR is used to accurately describe the function of F _min (f). And an improved PUCEL model is proposed to characterize the nonlinear characteristic of F _min(f). In the proposed model, the delays of transconductance g_m , output conductance g_ds , and source parasitic impedance R_s are considered. The calculated results by using SVR model, improved PUCEL model, and quasi-linear model are compared with measurement ones, which reveal that the periodical nonlinear characteristic is mainly caused by the delay of R_s .