An Accurate I-V Model of Gan HEMT Power Device for the Application of Low Atmospheric Pressure

Abstract

The characteristic variation of GaN HEMT device under low atmosphere pressure is studied in this research, which is a new challenge in the future. However, the variation is so small that cannot be represented by common current models. An accurate nonlinear current model is proposed in this study based on Angelov model to fit the small differences. The comparisons of simulated results based on the improved current model and measured results show that the improved model is accurate enough to describe the small differences and can improve the accuracy of nonlinear model of GaN HEMT device.