Modeling of Gan Hemt by Using an Improved K-Nearest Neighbors Algorithm

L. Sang EHF Key Laboratory of Fundamental Science University of Electronic Science and Technology of China Chengdu 611731, China

Y. Xu EHF Key Laboratory of Fundamental Science University of Electronic Science and Technology of China Chengdu 611731, China

Rui Cao 38th Research Institute of China Electronics Technology Group Corporation (CETC38) Hefei 230088, China

Y. Chen EHF Key Laboratory of Fundamental Science University of Electronic Science and Technology of China Chengdu 611731, China

Y. Guo EHF Key Laboratory of Fundamental Science University of Electronic Science and Technology of China Chengdu 611731, China

R. Xu EHF Key Laboratory of Fundamental Science University of Electronic Science and Technology of China Chengdu 611731, China

Pages 949-959 | Published online: 03 Apr 2012

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https://doi.org/10.1163/156939311795254019

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Abstract

A novel black-box modeling method for field effect transistor (FET) based on an improved K-Nearest Neighbors algorithm is proposed in this paper. K-Nearest Neighbors algorithm, which has simple algorithm structure and high accuracy, has shown great potential in regression application. A Taylor series expansion method is employed in nonlinear elements modeling of FET to improve the physical meaning of black-box model. A GaN HEMT power device is used to demonstrate the proposed method. And the experimentation shows that the calculated results using improved K-Nearest Neighbors algorithm based model fit the measurement results well.

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