Abstract
This research studies the measurements of dielectric properties of thin films at microwave frequencies by the cavity perturbation method. The measured frequency is in X-band (8.2–12.4 GHz). The titanium dioxide based (1-x)TiO2-xCaTiO3 and (1-x)TiO2-xSrTiO3 thin films deposited by the RF reactive magnetron sputtering method are adopted for the measurements. It was found that the dielectric constants of the films are increased as the compositions of CaTiO3 or SrTiO3 are increased. The microwave dielectric constants and loss tangents of films are measured. The accuracy of measurements is discussed.