Abstract
By combining the electrochemical and sol–gel deposition methods it was possible to prepare the heterojunction NiOx -SnO2 : F. High quality SnO2 : F thin films were prepared by the sol–gel technique on glass substrates. These films are very transparent in the visible region, with optical transmittance >85%, and have conductivity around 230 Ω-1 cm-1. By using electrochemical deposition it was possible to grow NiOx thin films on SnO2 : F coated glass substrates. Optical and electrical properties of the NiOx -SnO2 : F interface are detailed in the present study. Cyclic voltammetry measurements of NiOx thin films deposited on SnO2 : F show clearly the reversible movement of electrons, protons, and positive ions into the electrochromic NiOx film. With such results, the NiOx -SnO2 : F interface shows potential for application in electrochromic devices.