Effect of Presputtering on Plasma Ion Nitriding of Aluminium Substrates

U. Figueroa U. Figueroa ([email protected]), O. Salas, J. Oseguera and B. Ruiz are in the Instituto Tecnologico y de Estudios Superiores de Monterrey-Campus Estado de Mexico, Carretera a Lago de Guadalupe km 3.5, Atizapan, 52926Mexico, and S. Rodrgguez is in the Escuela Superior de Ingenieros Militares, Popotla, Mexico D.F., Mexico.

O. Salas U. Figueroa ([email protected]), O. Salas, J. Oseguera and B. Ruiz are in the Instituto Tecnologico y de Estudios Superiores de Monterrey-Campus Estado de Mexico, Carretera a Lago de Guadalupe km 3.5, Atizapan, 52926Mexico, and S. Rodrgguez is in the Escuela Superior de Ingenieros Militares, Popotla, Mexico D.F., Mexico.

J. Oseguera U. Figueroa ([email protected]), O. Salas, J. Oseguera and B. Ruiz are in the Instituto Tecnologico y de Estudios Superiores de Monterrey-Campus Estado de Mexico, Carretera a Lago de Guadalupe km 3.5, Atizapan, 52926Mexico, and S. Rodrgguez is in the Escuela Superior de Ingenieros Militares, Popotla, Mexico D.F., Mexico.

S. Rodríguez U. Figueroa ([email protected]), O. Salas, J. Oseguera and B. Ruiz are in the Instituto Tecnologico y de Estudios Superiores de Monterrey-Campus Estado de Mexico, Carretera a Lago de Guadalupe km 3.5, Atizapan, 52926Mexico, and S. Rodrgguez is in the Escuela Superior de Ingenieros Militares, Popotla, Mexico D.F., Mexico.

B. Ruiz U. Figueroa ([email protected]), O. Salas, J. Oseguera and B. Ruiz are in the Instituto Tecnologico y de Estudios Superiores de Monterrey-Campus Estado de Mexico, Carretera a Lago de Guadalupe km 3.5, Atizapan, 52926Mexico, and S. Rodrgguez is in the Escuela Superior de Ingenieros Militares, Popotla, Mexico D.F., Mexico.

Abstract

The relative effect of the presputtering treatment on the formation of AlN on Al substrates by ion plasma nitriding is investigated. In particular, presputtering time and temperature are considered. Samples of a commercial 7022-T6 Al alloy were nitrided in a two step process consisting of a presputtering stage in which time and temperature were varied and a nitriding stage carried out in the same conditions for all samples. The treated samples were characterised by optical and scanning electron microscopy and energy dispersive X-ray microanalysis, by glancing angle X-ray diffraction and by X-ray photoelectron spectroscopy. An optimal sputtering time was found for the production of thick, uniform AlN layers on the substrates. A higher presputtering temperature resulted in a shorter optimal presputtering time.

Reprints and Corporate Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

To request a reprint or corporate permissions for this article, please click on the relevant link below:

Order Reprints Request Corporate Permissions

Academic Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

Obtain permissions instantly via Rightslink by clicking on the button below:

Request Academic Permissions

If you are unable to obtain permissions via Rightslink, please complete and submit this Permissions form. For more information, please visit our Permissions help page.

Effect of Presputtering on Plasma Ion Nitriding of Aluminium Substrates

Information for

Open access

Opportunities

Help and information

Effect of Presputtering on Plasma Ion Nitriding of Aluminium Substrates

Abstract

Reprints and Corporate Permissions

Academic Permissions

Related research

To cite this article:

Download citation

Information for

Open access

Opportunities

Help and information

Keep up to date

Your download is now in progress and you may close this window

Login or register to access this feature