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Abstract
Effects of predeposited nickel thin films with thickness ranging from 20 to 60 nm on nucleation and growth of diamond on Si substrates have been investigated by using microwave plasma chemical vapour deposition technique. Results show that the Ni thin films greatly enhance the nucleation and orientation, and narrow the grain size distribution range of diamond on Si. This may be attributed to the formation of Ni nanoparticles on Si surface at the initial stage of deposition.