Abstract
Zinc oxide (ZnO) nanostructures are grown on p- and n-GaN/Si(111) by aqueous method in this paper. The structural and optical properties of the nanostructures are characterised by X-ray diffraction, scanning electron microscopy (SEM), atomic force microscopy, micro-Raman and photoluminescence. The results show the distinct appearance of ZnO nanostructures grown on different GaN substrates. The ZnO nanorod array with a hexagonal wurtzite structure is grown on the n-GaN/Si substrate, whereas the film-like structure is shown on p-GaN/Si. The morphology difference is due to the density of threading dislocations in the different doped GaN layers that can affect the ZnO nanorod density. Meanwhile, the ZnO nanostructures grown on n-GaN/Si show superior optical property with lower tensile stress compared with those on p-GaN/Si. The results will provide novel opportunities for the fabrication of hybrid ZnO/GaN optoelectronic devices.
This work was supported by the National Natural Science Foundation of China (grant no. 51102036) and the Fundamental Research Funds for the Central Universities (grant no. DC 10030107).