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Abstract
The present work considers the effect of oxygen activity on the chemical diffusion coefficient in terms of defect disorder and the related semiconducting properties. The transport kinetics under a chemical potential gradient in amphoteric oxide semiconductors exhibits a complex dependence within the n–p transition. It is shown that the effect may be related to the concentration of electronic charge carriers. The derived analytical form explains the empirical relationship between the chemical diffusion coefficient and oxygen activity reported for TiO2.