Interface structure and wetting behaviour of Cu/Ti₃SiC₂ system

Abstract

Wetting behaviour of a Cu/Ti₃SiC₂ system was investigated by the sessile drop technique under a vacuum atmosphere. Contact angles between Cu and Ti₃SiC₂ changed from 95 to 15° as temperatures increased from 1089 to 1270°C. Two distinct reaction layers consisting of different contents of Cu, TiC_x, Ti₃SiC₂ and Cu_xSi_y intermetallics were formed at the interface of Cu and Ti₃SiC₂. The formation of the interface layers contributes to the improvement of the wettability of the system. The dissolution of Si from theTi₃SiC₂ into the molten Cu at high temperature plays a dominant role in the wetting behaviour of Cu/Ti₃SiC₂ systems.

Keywords:

• Cu/Ti₃SiC₂
• Wettability
• Interface
• Microstructure

Acknowledgements

This work was financially supported by National Natural Science Foundation of China (grant nos. 50672005, 51172015, 51372015 and 51301013), and SRF for ROCS, SEM, and Beijing Government Funds for the Constructive Project of Central Universities.